Summary
This workshop was organized by EUFANET, CCT MCE, the CNES Technical Competence Center on MEMS and
Electronic Components (http://cct/cct15/sommaire.htm),
TOLSA the Toulouse Open Laboratory for Semiconductor Analysis (www.tolsa.org) and the TOD (Dynamic Optical
Testing) working group of ANADEF, the French Failure Analysis Society (www.anadef.org.). It was held Monday,
January 26, 2009 and Tuesday, January 27, 2009 in Toulouse.
Optical Localization Techniques Workshop in
Toulouse has been a great success with 75 people pre-registered
and more than 68 effectively attended despite the global
economic downturn (travel restrictions) and Saturday
storm in South West of France.
We
thank all the speakers for contributing to the EUFANET
workshop
Downloadable
presentations:
Call
for participation
Introduction
Session
1: Static Emission microscopy
Introduction
Static
Emission microscopy background
InGaAs
versus CCD
SIL
for improved sensitivity and spatial resolution
Selecting
Centric vs. Aplanatic RSIL
Influence
of Temperature Variation on Electrical and Photon Emission
AlGaN/GaN High Mobility Electron Transistors Characterization
Session
2: Optical probing techniques: Laser Voltage Probing,
Time Resolved Emission & Time Resolved Imaging
Introduction
Dynamic
Emission microscopy background
Functional
analysis with dynamic emission microscopy
Laser
Timing Probe with Frequency Mapping
LVP
Signal – Where to Probe? Modulation Mapping or LVI
Facing
the poor optical resolution and the sensor sensitivity
limitation challenges for TRE probing
Design
visibility enhancement for failure analysis
Session
3: Static laser Stimulation
Introduction
Nanoscale
resolution options for optical localization techniques
Static
Laser Stimulation background
3D
resolution with MOBIRCH
Application
of static laser stimulation to MEMS FA
Case
studies using MTLS on FA daily products
Relationship
of TLS/SIFT tools
Session
4: Thermography
Introduction
Application
of Thermography: some examples
Application
of Lock-in Thermography for Defect Localisation at Opened
and Fully Packaged Single- and Multi-chip Devices
Application
of transient interferometric mapping (TIM) technique
for analysis of ns-time scale thermal and carrier dynamics
in ESD protection devices
High
Resolution Raman Temperature Measurements
Session
5: Dynamic Laser Stimulation
Introduction
Dynamic
Laser Stimulation Background
Case
studies in DLS at NXP Semiconductors
xVM
applied to automotive products
Coupling
Test and DLS
DLS
using on-chip CPU:Harder, better, faster, stronger?
Application
of dynamic laser stimulation for qualification purpose
Picosecond
laser stimulation: status, applications & challenges
Session
6: Combined techniques
Introduction
Design
analysis in analog signal circuits enhanced by Emission
Microscopy and laser based techniques
Failure
Diagnosis by Optical Techniques Combined to Layout Localization
Software for Wafer Yield Improvement
Multiple
FA techniques on advanced technologies
Optical
investigation of a resistance-change memory device
Round
table
A cocktail
party will was held on Monday evening. This
party was sponsored by
We thank
our sponsors and
invite you to visit sponsors web site (just
click on the picture)
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How
to Analyze 3D packages
Summary
"How
to Analyze 3D packages" Workshop in
Arcachon at ESREF 2009, on October 7, has been a great success with 50
attendees.
We
thank all the speakers for contributing to the EUFANET
workshop
Downloadable
presentations:
Welcome
and EUFANET status update (Philippe Perdu, CNES)
Introduction
to 3D packages FA challenges (Pete Jacob, EMPA)
High
Resolution, 3D short circuits localization by magnetic
microscopy (Fulvio Infante, CNES)
Disconnections
analysis with HF Magnetic Microscopy (Martin Hechtl,
Infineon)
Laser
Chip Access (Frédéric Beauquis, Digitconcep)
3D Xray tomography :
real cases and examples (Jean-Philippe Roux, Sector
Technologies)
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